SI1012X-T1-GE3

Name: SI1012X-T1-GE3
Rating: 4.5 (10 reviews)

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

7,896 Effective Inventory

SI1012X-T1-GE3

Effective Inventory7,896

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Part # : SI1012X-T1-GE3
Package/Case: SC89-3
Part Status : ACTIVE
Brand: Siliconix
Product Categories : Single FETs, MOSFETs
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Initiate the application within 90 days from the shipment date.

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SI1012X-T1-GE3 DataSheet

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Details

Experience high performance with the SI1012X-T1-GE3, a cutting-edge N channel MOSFET designed for versatility. Boasting a drain source voltage of 20V and a continuous drain current of 600mA, this transistor is up to the task. Its on resistance of 700mohm, test voltage of 6V, and threshold voltage of 900mV ensure reliable operation in a variety of applications. Housed in a convenient SC-89 package, the SI1012X-T1-GE3 is perfect for space-limited designs that require efficient N channel switching. Step up your electronic projects with the superior performance of this top-notch MOSFET

Key Features

Application

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories |Battery Operated Systems |Power Supply Converter Circuits |Load/Power Switching Cell Phones, Pagers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SC-89-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	600 mA	Rds On - Drain-Source Resistance	700 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	450 mV
Qg - Gate Charge	750 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	275 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI1	Brand	Vishay / Siliconix
Configuration	Single	Fall Time	11 ns
Forward Transconductance - Min	1 S	Height	0.8 mm
Length	1.6 mm	Product Type !	MOSFET
Rise Time !	5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N Channel
Typical Turn-Off Delay Time	25 ns	Typical Turn-On Delay Time	5 ns
Width	0.85 mm	Part # Aliases	SI1012X-GE3
Unit Weight	0.001058 oz