SI2301BDS-T1-GE3

Name: SI2301BDS-T1-GE3
Rating: 4.5 (10 reviews)

3-Pin TO-236 P-Channel MOSFET, 20V, 2.2A, Tape and Reel Packaging"

4,827 Effective Inventory

SI2301BDS-T1-GE3

Effective Inventory4,827

3-Pin TO-236 P-Channel MOSFET, 20V, 2.2A, Tape and Reel Packaging"

Manufacturer Part # : SI2301BDS-T1-GE3
Package/Case: SOT23-3
Brand: Siliconix
Product Categories : Single FETs, MOSFETs

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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SI2301BDS-T1-GE3 DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$0.159	$0.16
10	$0.130	$1.30
30	$0.119	$3.57
100	$0.104	$10.40
500	$0.097	$48.50
1000	$0.093	$93.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for SI2301BDS-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

The Vishay Siliconix SI2301BDS-T1-GE3 is a P-Channel TrenchFET MOSFET from the renowned semiconductor manufacturer. This device is specifically designed for use in a variety of applications, including automotive, industrial, and consumer electronics. With its high-speed switching capabilities and low Rds(on) performance, it is an ideal choice for demanding DC/DC converters, motor drives, and LED lighting systems. The SI2301BDS-T1-GE3 MOSFET features a voltage rating of 20V, a current rating of 2.2A, and a maximum power dissipation of 700mW at an operating temperature range of -55°C to 150°C (TJ). Its compact SOT-23-3 package makes it perfect for surface-mount applications.

Key Features

P-Channel TrenchFET MOSFET
Operating voltage: up to 20V
Continuous drain current: up to 2.2A at 25°C
Maximum power dissipation: 700mW at -55°C to 150°C (TJ)
Compact SOT-23-3 package

Application

Automotive systems: DC/DC converters, motor drives, and LED lighting systems
Industrial applications: motor drives, lighting control systems, and power supplies
Consumer electronics: DC/DC converters, motor drives, and audio equipment

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SOT-23-3	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.2 A	Rds On - Drain-Source Resistance	100 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	950 mV
Qg - Gate Charge	4.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	700 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	20 ns
Height	1.45 mm	Length	2.9 mm
Product Type !	MOSFET	Rise Time !	40 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	20 ns	Width	1.6 mm
Part # Aliases	SI2301BDS-T1-BE3 SI2301BDS-GE3	Unit Weight	0.000282 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI2301BDS-T1-GE3 PDF Download

FAQs

What is SI2301BDS-T1-GE3?

The SI2301BDS-T1-GE3 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is commonly used in power management applications, battery protection, and load switching circuits.

How Does SI2301BDS-T1-GE3 Work?

The SI2301BDS-T1-GE3 operates as a power switch, controlling the flow of current in a circuit. The P-channel MOSFET conducts current when a negative voltage is applied to its gate terminal, allowing power to flow from the source to the drain terminal.

How Many Pins does SI2301BDS-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SI2301BDS-T1-GE3 is housed in a SOT-23 (Small Outline Transistor) package. The pinout configuration includes:

G: Gate terminal for controlling the MOSFET.
D: Drain terminal where the current flows out.
S: Source terminal where the current flows in.

What are the Pros and Cons of SI2301BDS-T1-GE3?

Pros:

Low On-Resistance: Offers low resistance when turned on, minimizing power losses.
Compact Size: SOT-23 package is space-efficient and suitable for small PCB layouts.
High Voltage Rating: Can handle moderate power levels and voltage ratings.

Cons:

Threshold Voltage: Requires a negative voltage on the gate relative to the source for conduction.
Drive Circuit Complexity: May need level-shifting circuitry for some applications.

Are There Any Equivalents/Alternatives to SI2301BDS-T1-GE3 for Recommendation?

The AO3400A from Alpha & Omega Semiconductor is a comparable P-channel MOSFET.
Alternatives to the SI2301BDS-T1-GE3 include the DMG2305UX from Diodes Incorporated and the SUP75P03-07-E3 from Vishay Siliconix.