SI2306BDS-T1-E3

Name: SI2306BDS-T1-E3
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

6,192 Effective Inventory

SI2306BDS-T1-E3

Effective Inventory6,192

Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

Manufacturer Part # : SI2306BDS-T1-E3
Package/Case: SOT23-3
Brand: Siliconix
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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SI2306BDS-T1-E3 DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$0.433	$0.43
10	$0.352	$3.52
30	$0.316	$9.48
100	$0.274	$27.40
500	$0.216	$108.00
1000	$0.206	$206.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for SI2306BDS-T1-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

FEATURES TrenchFET® Power MOSFET 100% RgTested

Key Features

Ultra-wideband frequency response
Excellent thermal management capabilities
Supports various industrial applications
Durable and long-lasting reliability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SOT-23-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	3.16 A	Rds On - Drain-Source Resistance	47 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	750 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	6 ns
Forward Transconductance - Min	7 S	Height	1.45 mm
Length	2.9 mm	Product Type !	MOSFET
Rise Time !	12 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	14 ns	Typical Turn-On Delay Time	7 ns
Width	1.6 mm	Part # Aliases	SI2306BDS-T1-BE3 SI2306BDS-E3
Unit Weight	0.000282 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI2306BDS-T1-E3 PDF Download

FAQs

What is SI2306BDS-T1-E3?

The SI2306BDS-T1-E3 is an N-channel MOSFET transistor designed by Vishay Siliconix. It is commonly used in various electronic circuits for switching and amplification purposes due to its small size and low on-resistance.

How Does SI2306BDS-T1-E3 Work?

The SI2306BDS-T1-E3 operates as a field-effect transistor (FET), where the gate voltage controls the flow of current between the source and drain terminals. By applying a voltage to the gate terminal, the transistor can switch on or off, allowing or restricting the flow of current through the device.

How Many Pins does SI2306BDS-T1-E3 have and What are the Functions of the Pinout Configuration?

The SI2306BDS-T1-E3 is typically housed in a SOT-23 package, which consists of three pins:

Gate (G): The pin that controls the flow of current through the transistor.
Drain (D): The pin where the current flows out of the transistor.
Source (S): The pin where the current flows into the transistor.

What are the Pros and Cons of SI2306BDS-T1-E3?

Pros:

Small Size: The SOT-23 package is compact, making it suitable for space-constrained designs.
Low On-Resistance: Provides efficient current conduction with low power dissipation.
Wide Voltage Range: Can handle a broad range of voltages, making it versatile in various applications.
Fast Switching Speed: Allows for rapid switching operations in electronic circuits.
Cost-Effective: Offers a cost-effective solution for switching and amplification needs.

Cons:

Temperature Sensitivity: The performance of the transistor may vary with temperature fluctuations.
Gate Voltage Limit: Operating beyond the specified gate voltage may lead to device failure.
Drive Voltage Requirements: May require specific gate drive voltages for optimal performance.

Are There Any Equivalents/Alternatives to SI2306BDS-T1-E3 for Recommendation?

Equivalent parts to the SI2306BDS-T1-E3 include the DMN2300UDM-7 from Diodes Incorporated and the NTGS3136NT1G from ON Semiconductor.
Alternatives to the SI2306BDS-T1-E3 are the BS170 from Fairchild Semiconductor and the IRF5305 from Infineon Technologies.