SI2333CDS-T1-E3
The SI2333CDS-T1-E3 MOSFET is compliant with ROHS standards, ensuring its environmental friendlinessSI2333CDS-T1-E3
The SI2333CDS-T1-E3 MOSFET is compliant with ROHS standards, ensuring its environmental friendliness
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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SI2333CDS-T1-E3 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
FEATURES• TrenchFET® Power MOSFETAPPLICATIONS• Load Switch• PA Switch
Key Features
- Fast switching time
- Low power consumption
- High reliability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 7.1 A | Rds On - Drain-Source Resistance | 35 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 18.5 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type ! | MOSFET |
Rise Time ! | 35 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 45 ns | Typical Turn-On Delay Time | 13 ns |
Width | 1.6 mm | Part # Aliases | SI2333CDS-T1-BE3 SI2333CDS-E3 |
Unit Weight | 0.000282 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SI2333CDS-T1-E3?
The SI2333CDS-T1-E3 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is commonly used as a low voltage, high efficiency switch in applications such as power management, load switching, and battery protection.
How Does SI2333CDS-T1-E3 Work?
The SI2333CDS-T1-E3 works by controlling the flow of current between the source and drain terminals based on the voltage applied to the gate terminal. As a P-channel MOSFET, it conducts current when a negative voltage is applied to the gate, making it suitable for low-side switching applications.
How Many Pins does SI2333CDS-T1-E3 have and What are the Functions of the Pinout Configuration?
The SI2333CDS-T1-E3 is housed in a SOT-23 package, which typically has three pins. The pinout configuration includes:
- G (Gate): Control pin for turning the MOSFET on and off.
- D (Drain): Terminal for the flow of output or load current.
- S (Source): Terminal for the input or supply current.
What are the Pros and Cons of SI2333CDS-T1-E3?
Pros:
- Low Voltage Operation: Suitable for low voltage applications.
- High Efficiency: Offers low on-resistance and high switching speeds for efficient power management.
- Compact Package: The SOT-23 package is space-efficient and suitable for compact designs.
- Low Power Consumption: Contributes to overall system energy efficiency.
Cons:
- Voltage and Current Limitations: May not be suitable for high voltage or high current applications.
- Heat Dissipation: Requires attention to heat dissipation and thermal management in high power applications.
Are There Any Equivalents/Alternatives to SI2333CDS-T1-E3 for Recommendation?
Alternatives to the SI2333CDS-T1-E3 include the SI2323CDS-T1-GE3 from Vishay Siliconix and the AO3400A from Alpha & Omega Semiconductor.
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