SI2392ADS-T1-GE3
SOT-23 MOSFET with 100V Vds and 20V VgsSI2392ADS-T1-GE3
SOT-23 MOSFET with 100V Vds and 20V Vgs
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Service & Packaging
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SI2392ADS-T1-GE3 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The SI2392ADS-T1-GE3 transistor excels in low-power applications that require precise signal control. Its N-channel structure offers superior conductivity, allowing for efficient signal amplification and modulation. The compact TO-236AB package enhances the transistor's heat dissipation capabilities, ensuring stable performance under varying temperature conditions. By being Halogen-free and RoHS compliant, this transistor meets strict environmental regulations and ensures user safety. The 3-pin TO-236 configuration simplifies the installation process, making it a convenient choice for electronics manufacturers
Key Features
- High-speed switching performance
- Low distortion and noise immunity
- Ruggedized for harsh environments
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 3.1 A | Rds On - Drain-Source Resistance | 102 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 2.9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 20 ns |
Product Type ! | MOSFET | Rise Time ! | 68 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 14 ns |
Typical Turn-On Delay Time | 40 ns | Part # Aliases | SI2392ADS-T1-BE3 |
Unit Weight | 0.000282 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SI2392ADS-T1-GE3?
The SI2392ADS-T1-GE3 is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay Siliconix. It is ideal for applications requiring low voltage operation, low on-resistance, and high-speed switching, such as power management, load switching, and battery protection circuits.
How Does SI2392ADS-T1-GE3 Work?
The SI2392ADS-T1-GE3 works as a power-switching transistor, controlling the flow of current based on the voltage applied to its gate terminal. As a P-channel MOSFET, it is used for high-side switching applications and can efficiently handle low-voltage signals while minimizing power loss due to its low on-resistance.
How Many Pins does SI2392ADS-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SI2392ADS-T1-GE3 is housed in a SOT-23 package. The pinout configuration includes:
- G: Gate pin, used to control the flow of current through the MOSFET.
- D: Drain pin, where the current flows in and out of the MOSFET.
- S: Source pin, the connection for the return current in a P-channel MOSFET.
What are the Pros and Cons of SI2392ADS-T1-GE3?
Pros:
- Low On-Resistance: Minimizes power loss and heat dissipation during operation.
- High-Speed Switching: Suitable for applications requiring fast switching times.
- Small Package: The SOT-23 package is compact and space-efficient.
- Low Voltage Operation: Ideal for low-voltage power management applications.
Cons:
- Gate-Source Voltage Limit: The maximum gate-source voltage may limit its use in higher voltage applications.
- Temperature Sensitivity: On-resistance can vary with temperature, requiring thermal considerations in high-power applications.
Are There Any Equivalents/Alternatives to SI2392ADS-T1-GE3 for Recommendation?
Alternatives to the SI2392ADS-T1-GE3 include the AOD403 from Alpha & Omega Semiconductor and the IPP60R190C6 from Infineon Technologies.
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