SI3410DV-T1-GE3

Name: SI3410DV-T1-GE3
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R

4,997 Effective Inventory

SI3410DV-T1-GE3

Effective Inventory4,997

Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R

Manufacturer Part # : SI3410DV-T1-GE3
Package/Case: TSOP-6
Part Status : Active
Brand: Siliconix
Product Categories : Single FETs, MOSFETs

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SI3410DV-T1-GE3 DataSheet

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Details

The SI3410DV-T1-GE3 is a MOSFET transistor that is designed for N-Channel operation with a maximum continuous drain current of 8A and a drain source voltage of 30V. It features an on resistance of 0.016ohm at a test voltage of 10V and a threshold voltage of 3V. With a power dissipation rating of 4.1W, this transistor is suitable for high-power applications where efficiency is crucial

Key Features

Quad-Port Power Sourcing Equipment (PSE) controller
IEEE 802.3at Type I and II compliant
Port priority shutdown control
Adds enhanced features for maximum design flexibility:
 Per-port current and voltage monitoring
 PoE Plus support with programmable current limits
 Multi-point detection
 Programmable power MOSFET gate drive control
 Configurable watchdog timer enables failsafe operation
Maskable interrupt pin
Comprehensive fault protection circuitry includes:
 Power undervoltage lockout
 Output current limit and short circuit protection
 Thermal overload detection
Supports pin-selectable AUTO mode
Extended operating temp range: –40 to +85 °C
5x7 mm 38-pin QFN package (RoHS-compliant)
On-chip dc-dc converter enables single-rail power operation

Application

IEEE Power Sourcing Equipment (PSE)
Power over Ethernet (PoE) Switches
IP Phone Systems
Smartgrid Switches
Ruggedized and Industrial Switches

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	TSOP-6	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	19.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	33 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	4.1 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI3	Brand	Vishay Semiconductors
Configuration	Single	Height	1.1 mm
Length	3.05 mm	Product Type !	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Width	1.65 mm	Part # Aliases	SI3410DV-GE3
Unit Weight	0.000705 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI3410DV-T1-GE3 PDF Download

FAQs

What is SI3410DV-T1-GE3?

The SI3410DV-T1-GE3 is a P-Channel 30V (Vds) MOSFET transistor designed by Vishay Siliconix. It is commonly used in power management applications to control and switch high current loads efficiently.

How Does SI3410DV-T1-GE3 Work?

The SI3410DV-T1-GE3 operates as a P-Channel MOSFET transistor, allowing it to switch power by controlling the voltage applied to the load. By turning the transistor on or off, the flow of current from source to drain can be managed effectively, making it suitable for power control and regulation in various circuits.

How Many Pins does SI3410DV-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SI3410DV-T1-GE3 is housed in a compact SOT-23 package. The pinout configuration includes:

G: Gate pin for controlling the switching of the MOSFET.
D: Drain pin for connecting to the load.
S: Source pin for connecting to the ground or power supply.

What are the Pros and Cons of SI3410DV-T1-GE3?

Pros:

Low On-Resistance: Provides efficient power switching with low conduction losses.
P-Channel MOSFET: Allows for high side switching and simpler drive circuitry.
Compact Package: SOT-23 package is space-efficient and suitable for compact designs.

Cons:

Gate Voltage Limitation: As a P-Channel MOSFET, the gate voltage needs to be lower than the source voltage for proper operation.
Current Handling: May have limitations in high-current applications compared to larger packages.

Are There Any Equivalents/Alternatives to SI3410DV-T1-GE3 for Recommendation?

An alternative to the SI3410DV-T1-GE3 is the SI3443DV-T1-GE3, also from Vishay Siliconix, offering similar characteristics.
Equivalent parts include the BS250P from Fairchild Semiconductor and the IRF4905PBF from Infineon Technologies.