SIA436DJ-T1-GE3
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/RSIA436DJ-T1-GE3
Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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SIA436DJ-T1-GE3 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
FEATURES• TrenchFET® power MOSFET• Thermally enhanced PowerPAK® SC-70 package - Small footprint area• 100 % Rg tested• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912APPLICATIONS• Load switch for portable applications such as smart phones, tablet PCs, and mobile computing - Low voltage gate drive - Low voltage drop - Power switch for ICs
Key Features
- Fully protected against voltage transients
- High-speed switching capability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SC-70-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 8 V |
Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 9.4 mOhms |
Vgs - Gate-Source Voltage | - 5 V, + 5 V | Vgs th - Gate-Source Threshold Voltage | 350 mV |
Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 19 W |
Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
Series | SIA | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 8 ns |
Forward Transconductance - Min | 70 S | Product Type ! | MOSFET |
Rise Time ! | 10 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 30 ns | Typical Turn-On Delay Time | 11 ns |
Part # Aliases | SIA436DJ-GE3 | Unit Weight | 0.035274 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SIA436DJ-T1-GE3?
The SIA436DJ-T1-GE3 is a dual P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management and switching applications. It is manufactured by Vishay Siliconix and is part of their extensive lineup of power semiconductor devices.
How Does SIA436DJ-T1-GE3 Work?
The SIA436DJ-T1-GE3 operates as a dual P-channel MOSFET, allowing it to control the flow of power in various circuits. It can be used for reverse polarity protection, high-side switching, and power distribution in battery management systems, voltage regulators, and other power-related applications.
How Many Pins does SIA436DJ-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SIA436DJ-T1-GE3 is housed in a compact and space-saving PowerPAK SO-8 package. The pinout configuration includes:
- GATE1: Gate terminal for MOSFET 1.
- SOURCE1: Source terminal for MOSFET 1.
- DRAIN1: Drain terminal for MOSFET 1.
- GATE2: Gate terminal for MOSFET 2.
- SOURCE2: Source terminal for MOSFET 2.
- DRAIN2: Drain terminal for MOSFET 2.
What are the Pros and Cons of SIA436DJ-T1-GE3?
Pros:
- Compact Package: The PowerPAK SO-8 package offers space-efficient and easy PCB mounting.
- High Power Handling: Capable of handling significant power levels for a wide range of applications.
- Reverse Polarity Protection: Suitable for use in circuits requiring protection against reverse voltage.
- Power Management: Enables efficient power distribution and switching in various systems.
- Manufactured by Vishay Siliconix: A reputable manufacturer known for high-quality power semiconductor devices.
Cons:
- Gate Drive Voltage: Requires careful consideration of gate drive voltage for optimal performance.
- Heat Dissipation: May require thermal management for high-power applications.
- Switching Speed: Performance may be limited by the switching speed of the MOSFETs.
Are There Any Equivalents/Alternatives to SIA436DJ-T1-GE3 for Recommendation?
- The SI7137DP-T1-GE3 from Vishay Siliconix is a similar dual P-channel MOSFET offering.
- Alternatives to the SIA436DJ-T1-GE3 include the AON7754 from Alpha and Omega Semiconductor and the BSC010N04LS from Infineon Technologies.
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