SIHG20N50C-E3

Name: SIHG20N50C-E3
Rating: 4.5 (10 reviews)

The specifications of SIHG20N50C-E3 include its TO-247AC-3 package type

8,638 Effective Inventory

SIHG20N50C-E3

Effective Inventory8,638

The specifications of SIHG20N50C-E3 include its TO-247AC-3 package type

Manufacturer Part # : SIHG20N50C-E3
Package/Case: TO247-3
Part Status : ACTIVE
Brand: Siliconix
Product Categories : Single FETs, MOSFETs
RoHS:

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray

SIHG20N50C-E3 DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$1.183	$1.18
10	$1.080	$10.80
25	$0.991	$24.78
100	$0.923	$92.30
500	$0.894	$447.00
1000	$0.880	$880.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for SIHG20N50C-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

The SIHG20N50C-E3, a remarkable 500V N-channel enhancement mode power MOSFET, is engineered to deliver a continuous drain current capability of 20A. Its incredibly low on-state resistance of 0.17 ohms makes it an ideal choice for high power applications where efficiency is critical. Housed in a TO-247 package, this MOSFET ensures outstanding thermal performance, allowing for efficient heat dissipation even under heavy loads. With a gate charge of just 40nC, the SIHG20N50C-E3 enables rapid switching speeds and minimizes switching losses, leading to improved system performance and reliability

Key Features

The SIHG20N50C-3 has a Vds rating of 500V
A maximum drain current of 21A
An Rds(on) of 0.18ohm
For use in high-power applications where high efficiency and reliability are key

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
REACH	Details	Technology	Si
Mounting Style	Through Hole	Package / Case	TO-247-3
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	270 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	65 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature !	+ 150 C
Pd - Power Dissipation	250 mW	Channel Mode	Enhancement
Brand	Vishay / Siliconix	Configuration	Single
Fall Time	44 ns	Forward Transconductance - Min	6.4 S
Height	20.82 mm	Length	15.87 mm
Product Type !	MOSFET	Rise Time !	27 ns
Factory Pack Quantity	500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	32 ns
Typical Turn-On Delay Time	80 ns	Width	5.31 mm
Unit Weight	0.211644 oz