SIS488DN-T1-GE3
Power MOSFET with a voltage handling capability of 40V and a low on-resistance of 5.5mOhm at 10VSIS488DN-T1-GE3
Power MOSFET with a voltage handling capability of 40V and a low on-resistance of 5.5mOhm at 10V
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Manufacturer Part # : SIS488DN-T1-GE3
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Package/Case: POWERPAK-8
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Part Status : ACTIVE
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Brand: Vishay
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
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SIS488DN-T1-GE3 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Whether used in power supplies, motor drives, or voltage regulators, the SIS488DN-T1-GE3 transistor excels in delivering robust power handling capabilities with minimal heat generation. Its advanced construction and materials make it suitable for demanding industrial environments where efficiency and longevity are crucial
Key Features
- Compact SOT-23 package
- Integrated gate protection
- Low on-resistance
- Fast switching speed
- Low threshold voltage
- Low input capacitance
- High peak current capability
- For use in high-speed switching applications
Application
- Data center networking
- Industrial Ethernet
- Network security appliances
- Cloud computing
- Telecommunications equipment
- Enterprise routers and switches
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-1212-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 40 A |
Rds On - Drain-Source Resistance | 4.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.1 V | Qg - Gate Charge | 32 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 52 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIS |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 9 ns | Forward Transconductance - Min | 65 S |
Product Type ! | MOSFET | Rise Time ! | 65 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 24 ns |
Typical Turn-On Delay Time | 22 ns | Unit Weight | 0.032487 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is SIS488DN-T1-GE3?
The SIS488DN-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is commonly used for power management, motor control, and switching applications in various electronic devices.
How Does SIS488DN-T1-GE3 Work?
The SIS488DN-T1-GE3 operates as a dual N-channel MOSFET, allowing it to control the flow of current between the source and drain terminals. By applying a voltage to the gate terminal, the MOSFET can modulate the conductivity of the channel, enabling efficient switching and amplification of electrical signals.
How Many Pins does SIS488DN-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SIS488DN-T1-GE3 is housed in a compact PowerPAK SO-8 package. The pinout configuration includes:
- GATE1, GATE2: Gate terminals for the two N-channel MOSFETs.
- SOURCE1, SOURCE2: Source terminals for the two N-channel MOSFETs.
- DRAIN1, DRAIN2: Drain terminals for the two N-channel MOSFETs.
- COM: Common pin for the two MOSFETs.
What are the Pros and Cons of SIS488DN-T1-GE3?
Pros:
- Dual MOSFET Configuration: Allows for independent control of two N-channel MOSFETs in a single package.
- High Power Handling: Capable of handling moderate to high power levels for various applications.
- Low On-Resistance: Provides efficient current conduction with low voltage drops.
- Compact Package: The PowerPAK SO-8 package is space-efficient and thermally enhanced.
Cons:
- Gate Drive Complexity: Requires accurate gate drive signals for optimal performance.
- Heat Dissipation: Higher power handling may require adequate heat sinking for thermal management.
- Application Specific: May not be suitable for all types of switching applications due to its N-channel MOSFET design.
Are There Any Equivalents/Alternatives to SIS488DN-T1-GE3 for Recommendation?
Alternatives to the SIS488DN-T1-GE3 include the SiSS18DN from Vishay Siliconix and the IPP037N06N3GXKSA1 from Infineon Technologies.
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