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PSMN028-100YS
N-Channel Power MOSFET rated for 30A and 100V with a resistance of 0.0275 ohms
PSMN028-100YS
N-Channel Power MOSFET rated for 30A and 100V with a resistance of 0.0275 ohms
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Service & Packaging
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PSMN028-100YS DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The PSMN028-100YS is a N-channel power MOSFET designed for use in applications that require high power and efficiency. It has a voltage rating of 100V and a continuous drain current of 75A, making it suitable for a wide range of power conversion and motor control applications.This MOSFET features a low on-resistance of 0.0028 ohms, which helps minimize power losses and improve overall efficiency. It also has a gate threshold voltage of 4V, allowing for easy integration into existing circuit designs.The PSMN028-100YS is housed in a TO-220 package, making it easy to mount on a heatsink for improved thermal performance. It has a maximum junction temperature of 175°C, ensuring reliable operation even in high-temperature environments.In terms of electrical characteristics, this MOSFET has a total gate charge of 250nC and a high di/dt capability, making it suitable for fast-switching applications. It also has a low input capacitance and output capacitance, reducing the risk of ringing and improving overall performance.
Key Features
- Enhanced power efficiency
- Low on-state resistance
- High input impedance
- Fast switching performance
- Low gate charge
- Enhanced 100V performance
- Designed for applications requiring high power
- RoHS compliant
Application
- Electric vehicle power conversion
- Motor control systems
- High frequency power supplies
- DC-DC converters
- Industrial automation
- Renewable energy systems
- Telecommunication equipment
- Lighting systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Transferred |
| Pin Count ! | 235 | Reach Compliance Code | |
| ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 68 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 30 A |
| Drain-source On Resistance-Max | 0.0275 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MO-235 | JESD-30 Code | R-PSFM-T4 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 4 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 137 A |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Finish | PURE TIN | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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