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PSMN1R1-25YLC
Meet the PSMN1R1-25YLC
PSMN1R1-25YLC
Meet the PSMN1R1-25YLC
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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PSMN1R1-25YLC DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
PSMN1R1-25YLC is a power MOSFET transistor designed for high efficiency power management in industrial and automotive applications. It features a drain-source voltage of 25V and a continuous drain current of 100A, making it suitable for high-power applications. The transistor is built using advanced MOSFET technology, allowing for low on-resistance and high switching speed. This results in improved efficiency and reduced power losses in the circuit. PSMN1R1-25YLC is housed in a TO-220 package, which provides good thermal performance and easy mounting onto heat sinks for proper heat dissipation. This helps in maintaining optimal operating temperatures and ensuring long-term reliability of the transistor. Additionally, the transistor has a low gate charge and gate threshold voltage, enabling fast and precise control of the switching operation. This makes it ideal for use in high-frequency switching circuits where fast response times are critical.
Key Features
- 25V V(br)dss Maximum Voltage Rating
- Continuous Drain Current of 91A
- Rds(on) of 1.61mOhm at Vgs of 10V
- Avalanche Energy Rating of 285mJ
- Low Gate Charge of 22nC
- TO-220 Full Pack Package
Application
- Lighting
- Motor control
- DC-DC converters
- Pulse generators
- Power management systems
- Automotive systems
- Industrial automation
- Inverters
- Solar inverters
- Uninterruptible power supplies (UPS)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Date Of Intro | 2017-02-01 | Additional Feature ! | HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 253 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 25 V |
| Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0015 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MO-235 |
| JESD-30 Code | R-PSSO-G4 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 4 | Operating Mode ! | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 1318 A |
| Surface Mount ! | YES | Terminal Finish | TIN |
| Terminal Form ! | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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