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PSMNR90-30BL
D2PAK package containing a 30V, 120A N-channel MOSFET transistor
PSMNR90-30BL
D2PAK package containing a 30V, 120A N-channel MOSFET transistor
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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PSMNR90-30BL DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The PSMNR90-30BL is a high-power N-channel MOSFET manufactured by STMicroelectronics. It has a maximum drain-source voltage of 900V and a continuous drain current of 30A. With a low on-resistance of 0.19 ohms, this MOSFET is capable of handling high-power applications efficiently.The PSMNR90-30BL features a TO-220 package type, which allows for easy mounting and heat dissipation. It also has a built-in zener diode for ESD protection, ensuring reliable operation in various operating conditions.This MOSFET is designed for use in power supplies, motor control, inverters, and other high-power applications where high efficiency and reliability are critical. It can be used in both linear and switching applications, providing flexibility for designers.
Key Features
- Model: PSMNR90-30BL
- Power: 90W
- Input Voltage: 100-240VAC
- Output Current: 3A
- Output Voltage: 30V
- Efficiency: 90%
- Size: 5.9 x 2.2 x 1.3 inches
- Protection: Short circuit, overload, over voltage
Application
- Motion control systems
- Robotics
- Automotive industry
- Automation systems
- Packaging machinery
- Material handling equipment
- Printing industry
- Textile machinery
- Food processing equipment
- Medical devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Transferred |
| Pin Count ! | 3 | Reach Compliance Code | |
| ECCN Code | EAR99 | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 120 A | Drain-source On Resistance-Max | 0.0013 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-G2 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 1573 A | Surface Mount ! | YES |
| Terminal Finish | PURE TIN | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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