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PSMN7R0-30YLC
Trans MOSFET N-CH 30V 61APSMN7R0-30YLC
Trans MOSFET N-CH 30V 61A
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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PSMN7R0-30YLC DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The PSMN7R0-30YLC is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power supply and motor control systems. It is part of the N-channel logic level enhancement mode MOSFET family and features a low on-state resistance of 7 mΩ and a maximum drain current of 120 A.This MOSFET is housed in a TO-220AB package and has a voltage rating of 30 V, making it suitable for a wide range of low voltage applications. It also has a high avalanche capability, allowing it to withstand large transient currents without damage.The PSMN7R0-30YLC is designed to operate at high efficiency, with a low gate charge and high switching speed, reducing power dissipation and improving overall system performance. It also features a low threshold voltage, making it compatible with logic level drive circuits.
Key Features
- Low ON-state resistance
- 100% avalanche tested
- Compliant to RoHS directive
- Halogen-free
- N-channel enhancement mode field-effect transistor
- 30 V, 7 A continuous drain current
- Designed for high-speed switching applications
- High energy efficiency
- Low capacitance
- Available in surface mount package
Application
- Electric vehicles
- Renewable energy systems
- Lighting systems
- Motor control systems
- Power supplies
- Industrial automation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Date Of Intro | 2017-02-01 | Additional Feature ! | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 15 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 61 A | Drain-source On Resistance-Max | 0.0089 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MO-235 |
| JESD-30 Code | R-PSSO-G4 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 4 | Operating Mode ! | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 245 A |
| Surface Mount ! | YES | Terminal Finish | TIN |
| Terminal Form ! | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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