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PSMN4R0-40YS
Plastic Power MOSFET in LFPAK-4 Package
PSMN4R0-40YS
Plastic Power MOSFET in LFPAK-4 Package
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Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
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PSMN4R0-40YS DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The PSMN4R0-40YS is a N-channel power MOSFET transistor designed for high-speed switching applications in power supply and motor control circuits. It has a maximum drain-source voltage rating of 40V and a continuous drain current of 43A, making it suitable for a wide range of high-power applications.This MOSFET features a low on-resistance of 4.0 mOhm, which helps minimize power losses and improve overall efficiency in power conversion systems. It also has a high current handling capability, allowing it to deliver high peak output power when needed.The PSMN4R0-40YS is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on a heatsink for effective heat dissipation. It also has a lead-free construction, making it compliant with RoHS regulations for environmentally friendly electronics.
Key Features
- N-channel power MOSFET
- 400V drain-source voltage
- 40A continuous drain current
- Low Qg for faster switching
- Low RDS(on) for reduced conduction losses
- Designed for fast switching applications
- Halogen-free and RoHS compliant
Application
- Power supplies
- Motor control
- Electric vehicles
- Industrial automation systems
- Home appliances
- Lighting systems
- Renewable energy systems
- Battery management systems
- UPS (Uninterruptible Power Supplies)
- Telecommunications equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Transferred |
| Pin Count ! | 235 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 77 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 V | Drain Current-Max (Abs) (ID) | 100 A |
| Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0042 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MO-235 |
| JESD-30 Code | R-PSSO-G4 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 4 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 106 W | Pulsed Drain Current-Max (IDM) | 472 A |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Finish | Tin (Sn) | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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