PSMN2R0-30YLE
Power Field-Effect TransistorPSMN2R0-30YLE
Power Field-Effect Transistor
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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About Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Example
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PSMN2R0-30YLE DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8)NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAKAs a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application?The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise…Key benefits► High efficiency in power switching applications► Industry’s lowest RDS(on) Power-SO8 - Less than 1 mΩ at 25 V and 30 V► Low Qoss for reduced output losses between DRAIN & SOURCE► Low Qgd for reduced switching losses and high frequency switching► 20 V rated GATE provides better tolerance to voltage transients than lateral MOSFET types► Superior ‘Safe Operating Area’ performance compared to other Trench MOSFET vendors► Optimised for 4.5 V gate drive voltage► Optimum switching performance under light & heavy load conditions► LFPAK package for compatibility with other vendor Power-SO8 types► Eliminates costly X-ray inspection – LFPAK solder joints can be optically inspectedKey applications► Synchronous buck regulators► DC-DC conversion► Voltage regulator modules (VRM)► Power OR-ing
Key Features
- Enhanced forward biased safe operating area for superior linear mode operation
- Very low Rdson for low conduction losses
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Date Of Intro | 2017-02-01 | Avalanche Energy Rating (Eas) | 370 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 100 A |
Drain-source On Resistance-Max | 0.0035 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | MO-235 | JESD-30 Code | R-PSSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 1084 A | Reference Standard | IEC-60134 |
Surface Mount ! | YES | Terminal Finish | TIN |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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