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TO247-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| 2SK4124 | high-performance power MOSFET | Onsemi | Obsolete | 3~7 Days | 7,881 | |
| IRG4PH50SPBF | 1200V 57A 200W 3-Pin(3+Tab) | Infineon Technologies | 3~7 Days | 6,075 | ||
| IRG4PC50UPBF | IRG4PC50UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high power applications, featuring a 55A current rating in a TO-247 package | Infineon Technologies | 3~7 Days | 4,057 | ||
| IRG4PC40UDPBF | IGBT Transistors for high-frequency applications | Infineon Technologies | Obsolete | 3~7 Days | 5,684 | |
| IPW65R045C7FKSA1 | Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube | Infineon Technologies | ACTIVE | 3~7 Days | 6,240 | |
| IXFH24N80P | MOSFET DIODE Id24 BVdass800 | Ixys Integrated Circuits Division | 3~7 Days | 450 | ||
| IKQ75N120CS7XKSA1 | IGBT Transistors | Infineon Technologies | 3~7 Days | 5,606 | ||
| IXTH120N20X4 | MOSFETs that are ROHS compliant | Ixys Integrated Circuits Division | 3~7 Days | 4,828 | ||
| MSC360SMA120B | MOSFET MOSFET SIC 1200 V 360 mOhm TO-247 | Microchip Technology | 3~7 Days | 5,434 | ||
| IXTH80N65X2 | Dual Pack Power MOSFET | Ixys Integrated Circuits Division | 3~7 Days | 7,024 | ||
| IXFH50N30Q3 | IXFH50N30Q3 MOSFET HiPerFET Power | Ixys Integrated Circuits Division | 3~7 Days | 4,695 | ||
| IXFH67N10 | MOSFET 67 Amps 100V | Ixys Integrated Circuits Division | 3~7 Days | 4,242 | ||
| IXFH34N65X2 | Field-Effect Transistor for power applications | Ixys Integrated Circuits Division | Active | 3~7 Days | 6,332 | |
| IXTH1N300P3HV | Unipolar N-MOSFET transistor designed to handle high voltages up to 3kV, with a maximum current of 1A and power dissipation of 195W | Ixys Integrated Circuits Division | 3~7 Days | 2,041 | ||
| TIP140G | Darlington Transistors 10A 60V Bipolar Power NPN | Onsemi | OBSOLETE | 3~7 Days | 8,967 | |
| NDD03N80Z-1G | MOSFET Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK | Onsemi | 3~7 Days | 3,546 | ||
| MUR3020WTG | Rectifier Diode Switching 200V 30A 35ns 3-Pin(3+Tab) TO-247 Rail | Onsemi | OBSOLETE | 3~7 Days | 8,598 | |
| MBR6045WTG | Schottky Diodes & Rectifiers 60A 45V | Onsemi | OBSOLETE | 3~7 Days | 5,230 | |
| MBR40H100WTG | <p>Enhanced Schottky rectifiers with lower VF, higher surge, and lower IR parameters.</p> | Onsemi | 3~7 Days | 2,712 | ||
| IXFH42N50P2 | Featuring a voltage rating of 500V and a maximum current capacity of 42A, the IXFH42N50P2 is an N-channel MOSFET designed for high-power applications | Ixys Integrated Circuits Division | 3~7 Days | 5,797 | ||
| IXFH74N20P | Power Field-Effect Transistor, 74A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,728 | |
| IXFH42N20 | The product labeled IXFH42N20 is a 200V N-channel MOSFET capable of handling currents up to 42A, presented in a TO-247AD package | Ixys Integrated Circuits Division | NRND | 3~7 Days | 5,763 | |
| IXFH42N60P3 | PolarP3 Power MOSFET with 600V voltage and 42A current rating | Ixys Integrated Circuits Division | Active | 3~7 Days | 8,163 | |
| IXFH70N30Q3 | MOSFETs IXFH70N30Q3 TO-247AD ROHS | Ixys Integrated Circuits Division | 3~7 Days | 7,040 | ||
| IXFH50N50P3 | High-Power Field-Effect Transistor IXFH50N50P3 | Ixys Integrated Circuits Division | Obsolete | 3~7 Days | 8,065 | |
| IXFH96N20P | Low on-resistance of 24mΩ at 500mA | Ixys Integrated Circuits Division | 3~7 Days | 4,028 | ||
| IXFH26N60Q | Advanced MOSFET for precise voltage regulatio | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 6,007 | |
| IXFH20N50P3 | TO-247AD Packaged N-Channel MOSFET with 500V Drain-Source Voltage, 20A Drain Current | Ixys Integrated Circuits Division | 3~7 Days | 4,568 | ||
| IXFH230N10T | IXFH230N10T TO-247AD ROHS MOSFETs | Ixys Integrated Circuits Division | 3~7 Days | 6,313 | ||
| IXFH14N80P | With its high voltage and current ratings, low on-resistance, and ROHS certification, the IXFH14N80P is ideal for high-power applications | Ixys Integrated Circuits Division | 3~7 Days | 3,603 | ||
| IXFH18N90P | Experience superior power management with the MOSFET PolarHV HiPerFETs IXFH18N90P, boasting a voltage rating spanning from 500V to 1 | Ixys Integrated Circuits Division | 3~7 Days | 2,911 | ||
| IXFH22N60P3 | N-MOSFET Transistor: Unipolar, 600V, 22A, 500W, TO247-3 | Ixys Integrated Circuits Division | Active | 3~7 Days | 5,409 | |
| IXFH36N60P | High power TO-247AD package MOSFET with 190mΩ on-resistance at 18A | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,440 | |
| IXFH96N15P | This MOSFET, known as IXFH96N15P, offers a 96 Amps current rating, 150V voltage capability, and 0.024 Rds resistance | Ixys Integrated Circuits Division | 3~7 Days | 5,688 | ||
| IXFH30N50Q3 | This product is a three-pin TO-247AD package containing a high-voltage N-channel MOSFET, suitable for applications requiring robust power switching | Ixys Integrated Circuits Division | 3~7 Days | 2,672 | ||
| IXFH26N50Q | N-Channel Silicon Metal-oxide Semiconductor FET | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 5,592 | |
| IXFH24N90P | This MOSFET, with part number IXFH24N90P, is designed for high performance applications | Ixys Integrated Circuits Division | 3~7 Days | 6,623 | ||
| IXFH40N30Q | TO-247 package with 3 PIN configuration | Ixys Integrated Circuits Division | OBSOLETE | 3~7 Days | 9,854 | |
| IXTH160N15T | Power Transistor with 160 Ampere Current Rating | Ixys Integrated Circuits Division | 3~7 Days | 4,915 | ||
| IXTX60N50L2 | IXTX60N50L2 is a power MOSFET designed for switching applications with high efficiency | Ixys Integrated Circuits Division | 3~7 Days | 7,630 |
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